2N5883 2N5884
2N5885 2N5886
PNP
NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5883, 2N5885
series types are complementary silicon epitaxial base
transistors designed for power amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
CContinuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
JC
2N5883
2N5885
60
60
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEO
VCE=½Rated VCEO
ICEX
VCE=Rated VCEO, VBE=1.5V
ICEX
VCE=Rated VCEO, VBE=1.5V, TC=150°C
IEBO
VEB=5.0V
BVCEO
IC=200mA (2N5883, 2N5885)
60
BVCEO
IC=200mA (2N5884, 2N5886)
80
VCE(SAT) IC=15A, IB=1.5A
VCE(SAT) IC=25A, IB=6.25A
VBE(SAT) IC=25A, IB=6.25A
VBE(ON)
VCE=4.0V, IC=10A
hFE
VCE=4.0V, IC=3.0A
35
hFE
VCE=4.0V, IC=10A
20
hFE
VCE=4.0V, IC=25A
4.0
fT
VCE=10V, IC=1.0A, f=1.0MHz
4.0
Cob
VCB=10V, IE=0, f=1.0MHz (2N5883, 2N5885)
Cob
VCB=10V, IE=0, f=1.0MHz (2N5884, 2N5886)
hfe
VCE=4.0V, IC=3.0A, f=1.0kHz
20
tr
VCC=30V, IC=10A, IB1=IB2=1.0A
ts
VCC=30V, IC=10A, IB1=IB2=1.0A
tf
VCC=30V, IC=10A, IB1=IB2=1.0A
2N5884
2N5886
80
80
UNITS
V
V
V
A
A
A
W
°C
°C/W
5.0
25
50
7.5
200
-65 to +200
0.875
MAX
1.0
2.0
1.0
10
1.0
1.0
4.0
2.5
1.5
UNITS
mA
mA
mA
mA
mA
V
V
V
V
V
V
100
1000
500
MHz
pF
pF
0.7
1.0
0.8
μs
μs
μs
R1 (4-December 2012)
2N5883 2N5884
2N5885 2N5886
PNP
NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
R1 (4-December 2012)
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REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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